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Guide to state-of-the-art electron devices /
紀錄類型:
書目-語言資料,印刷品 : 單行本
正題名/作者:
Guide to state-of-the-art electron devices // edited by Joachim N. Burghartz.
其他作者:
Burghartz, Joachim N.
出版者:
Chichester, West Sussex, UK :John Wiley & Sons,2013.
面頁冊數:
xviii, 300 p. :ill. (chiefly col.) ;26 cm.
附註:
Papers by members of the IEEE Electron Devices Society.
標題:
Electronic apparatus and appliances. -
電子資源:
http://catalogimages.wiley.com/images/db/jimages/9781118347263.jpg
ISBN:
9781118347263 (hardback) :
ISBN:
1118347269 (hardback)
Guide to state-of-the-art electron devices /
Guide to state-of-the-art electron devices /
edited by Joachim N. Burghartz. - Chichester, West Sussex, UK :John Wiley & Sons,2013. - xviii, 300 p. :ill. (chiefly col.) ;26 cm.
Papers by members of the IEEE Electron Devices Society.
Includes bibliographical references and index.
Machine generated contents note: Foreword Preface Contributors and Acknowledgements Historic Timeline Part I - Basic Electron Devices 1 Bipolar Transistors 1.1 Motivation 1.2 The pn Junction and Its Electronic Applications 1.3 The Bipolar Junction Transistor and Its Electronic Applications 1.4 Optimization of Bipolar Transistors 1.5 SiGe Heterojunction Bipolar Transistors References 2 MOS Devices 2.1 Introduction 2.2 MOSFET Basics 2.3 The Evolution of MOSFET 2.4 Concluding Remarks References 3 Memory Devices 3.1 Introduction 3.2 Volatile Memories 3.3 Non-Volatile Memories 3.4 Future Perspectives of MOS Memories 3.5 Closing Remarks References 4 Passive Components 4.1 Discrete and integrated passive components 4.2 Application in Analog ICs and DRAM 4.3 The planar Spiral Inductor - A Case Study 4.4 Parasitics in Integrated Circuits References 5 Emerging Research Devices 5.1 Non-Charge Based Switching 5.2 Carbon as a Replacement for Silicon and the Rise of Moletronics 5.3 Conclusions References Part II - Aspects of Device and IC Manufacturing 6 Electronics Materials 6.1 Introduction 6.2 Silicon Device Technology 6.3 Compound Semiconductor Devices 6.4 Electronic Displays 6.5 Conclusions References 7 Compact Modeling 7.1 The Role of Compact Models 7.2 Bipolar Transistor Compact Modeling 7.3 MOS Transistor Compact Modeling 7.4 Compact Modeling of Passive Components 7.5 Benchmarking and Implementation References 8 Technology Computer Aided Design 8.1 Introduction 8.2 Drift-Diffusion Model 8.3 Microscopic Transport Models 8.4 Quantum Transport Models 8.5 Process and Equipment Simulation References 9 Device Reliability Physics 9.1 Introduction and Background 9.2 Device Reliability Issues 9.3 Interconnect Degradation Mechanisms 9.4 Circuit-Level Reliability Issues 9.5 Microscopic Approaches to Assuring Reliability of ICs References 10 Semiconductor Manufacturing 10.1 Introduction 10.2 Substrates 10.3 Lithography and Etching 10.4 Front-End Processing 10.5 Back-End
"Concise, high quality and comparative overview of state-of-the-art electron device development, manufacturing technologies and applications Guide to State-of-the-Art Electron Devices marks the 60th anniversary of the IEEE Electron Devices Committee and the 35th anniversary of the IEEE Electron Devices Society, as such it defines the state-of-the-art of electron devices, as well as future directions across the entire field. Spans full range of electron device types such as photovoltaic devices, semiconductor manufacturing and VLSI technology and circuits, covered by IEEE Electron and Devices Society Contributed by internationally respected members of the electron devices community A timely desk reference with fully-integrated colour and a unique lay-out with sidebars to highlight the key terms Discusses the historical developments and speculates on future trends to give a more rounded picture of the topics covered A valuable resource R&D managers; engineers in the semiconductor industry; applied scientists; circuit designers; Masters students in power electronics; and members of the IEEE Electron Device Society"--
ISBN: 9781118347263 (hardback) :NT1070
LCCN: 2012040303Subjects--Topical Terms:
156349
Electronic apparatus and appliances.
LC Class. No.: TK7870 / G83 2013
Dewey Class. No.: 621.3815
Guide to state-of-the-art electron devices /
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Guide to state-of-the-art electron devices /
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Machine generated contents note: Foreword Preface Contributors and Acknowledgements Historic Timeline Part I - Basic Electron Devices 1 Bipolar Transistors 1.1 Motivation 1.2 The pn Junction and Its Electronic Applications 1.3 The Bipolar Junction Transistor and Its Electronic Applications 1.4 Optimization of Bipolar Transistors 1.5 SiGe Heterojunction Bipolar Transistors References 2 MOS Devices 2.1 Introduction 2.2 MOSFET Basics 2.3 The Evolution of MOSFET 2.4 Concluding Remarks References 3 Memory Devices 3.1 Introduction 3.2 Volatile Memories 3.3 Non-Volatile Memories 3.4 Future Perspectives of MOS Memories 3.5 Closing Remarks References 4 Passive Components 4.1 Discrete and integrated passive components 4.2 Application in Analog ICs and DRAM 4.3 The planar Spiral Inductor - A Case Study 4.4 Parasitics in Integrated Circuits References 5 Emerging Research Devices 5.1 Non-Charge Based Switching 5.2 Carbon as a Replacement for Silicon and the Rise of Moletronics 5.3 Conclusions References Part II - Aspects of Device and IC Manufacturing 6 Electronics Materials 6.1 Introduction 6.2 Silicon Device Technology 6.3 Compound Semiconductor Devices 6.4 Electronic Displays 6.5 Conclusions References 7 Compact Modeling 7.1 The Role of Compact Models 7.2 Bipolar Transistor Compact Modeling 7.3 MOS Transistor Compact Modeling 7.4 Compact Modeling of Passive Components 7.5 Benchmarking and Implementation References 8 Technology Computer Aided Design 8.1 Introduction 8.2 Drift-Diffusion Model 8.3 Microscopic Transport Models 8.4 Quantum Transport Models 8.5 Process and Equipment Simulation References 9 Device Reliability Physics 9.1 Introduction and Background 9.2 Device Reliability Issues 9.3 Interconnect Degradation Mechanisms 9.4 Circuit-Level Reliability Issues 9.5 Microscopic Approaches to Assuring Reliability of ICs References 10 Semiconductor Manufacturing 10.1 Introduction 10.2 Substrates 10.3 Lithography and Etching 10.4 Front-End Processing 10.5 Back-End
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Processing 10.6 Process Control 10.7 Assembly and Test 10.8 Future Directions References Part III - Applications based on Electron Devices 11 VLSI Logic Technology and Circuits 11.1 Introduction 11.2 MOSFET Scaling Trends 11.3 Low-Power and High-Speed Logic Design 11.4 Scaling-Driven technology Enhancements 11.5 Ultra-Low Voltage Transistors 11.6 Interconnects 11.7 Memory Design 11.8 System Integration References 12 VLSI Mixed-Signal Technology And Circuits 12.1 Introduction 12.2 Analog/Mixed-Signal Technologies in Scaled CMOS 12.3 Data Converter ICs 12.4 Mixed-Signal Circuits in Low-Power Display Applications 12.5 Image Sensor Technology and Circuits References 13 Memory Technologies 13.1 Semiconductor Memory History 13.2 State of Mainstream Semiconductor Memory Today 13.3 Emerging Memory Technologies 13.4 Conclusions References 14 RF&Microwave Semiconductor Technologies 14.1 III-V Based: GaAs and InP 14.2 Si and SiGe 14.3 Wide Bandgap Devices (Group III-Nitrides, SiC and Diamond) References 15 Power Devices and ICs 15.1 Overview of Power Devices & ICs 15.2 Two-Carrier and High-Power Devices 15.3 Power MOSFET Devices 15.4 High-Voltage and Power ICs 15.5 Wide Bandgap Power Devices References 16 Photovoltaic Device Applications 16.1 Introduction 16.2 Silicon Photovoltaics 16.3 Polycrystalline Thin-Film Photovoltaics 16.4 III-V Compound Photovoltaics 16.5 Future Concepts in Photovoltaics References 17 Large Area Electronics 17.1 Thin-Film Solar Cells 17.2 Large-Area Imaging 17.3 Flat-Panel Displays References 18 Microelectromechanical Systems (MEMS) 18.1 Introduction 18.2 The 1960's - First Micromachined Structures Envisioned 18.3 The 1970's - Integrated Sensors Started 18.4 The 1980's - Surface Micromachining Emerged 18.5 The 1990's - MEMS Impacted Various Fields 18.6 The 2000's - Diversified Sophisticated Systems Enabled By MEMS 18.7 Future Outlook References 19 Vacuum Device Applications 19.1 Traveling-Wave Devices 19.2 Klystrons 19.3 Inductive Output Tubes 19
505
0 #
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4 Crossed-Field Devices 19.5 Gyro-Devices References 20 Optoelectronic Device Applications 20.1 Introduction 20.2 Light Emission in Semiconductors 20.3 Photodetectors 20.4 Integrated Optoelectronics 20.5 Optical Interconnects 20.6 Concluding Remarks References 21 Devices for the Post Silicon CMOS Era 21.1 Introduction 21.2 Devices for the 8-nm Node With Conventional Materials 21.3 New Channel Materials and Devices 21.4 Concluding Remarks References Index .
520
#
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"Concise, high quality and comparative overview of state-of-the-art electron device development, manufacturing technologies and applications Guide to State-of-the-Art Electron Devices marks the 60th anniversary of the IEEE Electron Devices Committee and the 35th anniversary of the IEEE Electron Devices Society, as such it defines the state-of-the-art of electron devices, as well as future directions across the entire field. Spans full range of electron device types such as photovoltaic devices, semiconductor manufacturing and VLSI technology and circuits, covered by IEEE Electron and Devices Society Contributed by internationally respected members of the electron devices community A timely desk reference with fully-integrated colour and a unique lay-out with sidebars to highlight the key terms Discusses the historical developments and speculates on future trends to give a more rounded picture of the topics covered A valuable resource R&D managers; engineers in the semiconductor industry; applied scientists; circuit designers; Masters students in power electronics; and members of the IEEE Electron Device Society"--
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Burghartz, Joachim N.
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