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Hf-Based High-k DielectricsProcess D...
~
Kim, Young-Hee.
Hf-Based High-k DielectricsProcess Development, Performance Characterization, and Reliability /
紀錄類型:
書目-電子資源 : 單行本
正題名/作者:
Hf-Based High-k Dielectrics/ by Young-Hee Kim, Jack C. Lee.
其他題名:
Process Development, Performance Characterization, and Reliability /
作者:
Kim, Young-Hee.
其他作者:
Lee, Jack C.
面頁冊數:
X, 92 p.online resource.
Contained By:
Springer Nature eBook
標題:
Electrical engineering. -
電子資源:
Fulltext (查閱電子書全文)
ISBN:
9783031025525
Hf-Based High-k DielectricsProcess Development, Performance Characterization, and Reliability /
Kim, Young-Hee.
Hf-Based High-k Dielectrics
Process Development, Performance Characterization, and Reliability /[electronic resource] :by Young-Hee Kim, Jack C. Lee. - 1st ed. 2005. - X, 92 p.online resource. - Synthesis Lectures on Solid State Materials and Devices,1932-1724. - Synthesis Lectures on Solid State Materials and Devices,.
Introduction -- Hard- and Soft-Breakdown Characteristics of Ultrathin HfO2 Under Dynamic and Constant Voltage Stress -- Impact of High Temperature Forming Gas and D2 Anneal on Reliability of HfO2 Gate Dielectrics -- Effect of Barrier Height and the Nature of Bilayer Structure of HfO2 with Dual Metal Gate Technology -- Bimodal Defect Generation Rate by Low Barrier Height and its Impact on Reliability Characteristics.
In this work, the reliability of HfO2 (hafnium oxide) with poly gate and dual metal gate electrode (Ru-Ta alloy, Ru) was investigated. Hard breakdown and soft breakdown, particularly the Weibull slopes, were studied under constant voltage stress. Dynamic stressing has also been used. It was found that the combination of trapping and detrapping contributed to the enhancement of the projected lifetime. The results from the polarity dependence studies showed that the substrate injection exhibited a shorter projected lifetime and worse soft breakdown behavior, compared to the gate injection. The origin of soft breakdown (first breakdown) was studied and the results suggested that the soft breakdown may be due to one layer breakdown in the bilayer structure (HfO2/SiO2: 4 nm/4 nm). Low Weibull slope was in part attributed to the lower barrier height of HfO2 at the interface layer. Interface layer optimization was conducted in terms of mobility, swing, and short channel effect using deep submicron MOSFET devices.
ISBN: 9783031025525
Standard No.: 10.1007/978-3-031-02552-5doiSubjects--Topical Terms:
191626
Electrical engineering.
LC Class. No.: TK1-9971
Dewey Class. No.: 621.3
Hf-Based High-k DielectricsProcess Development, Performance Characterization, and Reliability /
LDR
:02808nmm a22003735i 4500
001
1000127471
003
DE-He213
005
20220601145729.0
007
cr nn 008mamaa
008
220601s2005 sz | s |||| 0|eng d
020
$a
9783031025525
$9
978-3-031-02552-5
024
7
$a
10.1007/978-3-031-02552-5
$2
doi
035
$a
978-3-031-02552-5
050
4
$a
TK1-9971
072
7
$a
THR
$2
bicssc
072
7
$a
TEC007000
$2
bisacsh
072
7
$a
THR
$2
thema
082
0 4
$a
621.3
$2
23
100
1
$a
Kim, Young-Hee.
$e
author.
$4
aut
$4
http://id.loc.gov/vocabulary/relators/aut
$3
1000149581
245
1 0
$a
Hf-Based High-k Dielectrics
$h
[electronic resource] :
$b
Process Development, Performance Characterization, and Reliability /
$c
by Young-Hee Kim, Jack C. Lee.
250
$a
1st ed. 2005.
264
1
$a
Cham :
$b
Springer International Publishing :
$b
Imprint: Springer,
$c
2005.
300
$a
X, 92 p.
$b
online resource.
336
$a
text
$b
txt
$2
rdacontent
337
$a
computer
$b
c
$2
rdamedia
338
$a
online resource
$b
cr
$2
rdacarrier
347
$a
text file
$b
PDF
$2
rda
490
1
$a
Synthesis Lectures on Solid State Materials and Devices,
$x
1932-1724
505
0
$a
Introduction -- Hard- and Soft-Breakdown Characteristics of Ultrathin HfO2 Under Dynamic and Constant Voltage Stress -- Impact of High Temperature Forming Gas and D2 Anneal on Reliability of HfO2 Gate Dielectrics -- Effect of Barrier Height and the Nature of Bilayer Structure of HfO2 with Dual Metal Gate Technology -- Bimodal Defect Generation Rate by Low Barrier Height and its Impact on Reliability Characteristics.
520
$a
In this work, the reliability of HfO2 (hafnium oxide) with poly gate and dual metal gate electrode (Ru-Ta alloy, Ru) was investigated. Hard breakdown and soft breakdown, particularly the Weibull slopes, were studied under constant voltage stress. Dynamic stressing has also been used. It was found that the combination of trapping and detrapping contributed to the enhancement of the projected lifetime. The results from the polarity dependence studies showed that the substrate injection exhibited a shorter projected lifetime and worse soft breakdown behavior, compared to the gate injection. The origin of soft breakdown (first breakdown) was studied and the results suggested that the soft breakdown may be due to one layer breakdown in the bilayer structure (HfO2/SiO2: 4 nm/4 nm). Low Weibull slope was in part attributed to the lower barrier height of HfO2 at the interface layer. Interface layer optimization was conducted in terms of mobility, swing, and short channel effect using deep submicron MOSFET devices.
650
0
$a
Electrical engineering.
$3
191626
650
0
$a
Materials science.
$3
161604
650
1 4
$a
Electrical and Electronic Engineering.
$3
1000149431
650
2 4
$a
Materials Science.
$3
1000149584
700
1
$a
Lee, Jack C.
$e
author.
$4
aut
$4
http://id.loc.gov/vocabulary/relators/aut
$3
1000149582
710
2
$a
SpringerLink (Online service)
$3
1000143549
773
0
$t
Springer Nature eBook
776
0 8
$i
Printed edition:
$z
9783031014246
776
0 8
$i
Printed edition:
$z
9783031036804
830
0
$a
Synthesis Lectures on Solid State Materials and Devices,
$x
1932-1724
$3
1000149583
856
4 0
$u
https://doi.org/10.1007/978-3-031-02552-5
$z
Fulltext (查閱電子書全文)
912
$a
ZDB-2-SXSC
950
$a
Synthesis Collection of Technology (R0) (SpringerNature-85007)
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