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MOSFET models for SPICE simulation, including BSIM3v3 and BSIM4 /

Record Type:	Language materials, printed : Monograph/item
Title/Author:	MOSFET models for SPICE simulation, including BSIM3v3 and BSIM4 // William Liu.
remainder title:	aMetal oxide semiconductor field-effect transistors models for SPICE simulation, including BSIM3v3 and BSIM4.
Author:	Liu, William.
Published:	New York :Wiley,c2001.
Description:	xii, 588 p. :ill. ;24 cm.
標題:	Metal oxide semiconductor field-effect transistors - Computer simulation. -
電子資源:	http://www.loc.gov/catdir/toc/wiley021/2001281228.html
電子資源:	http://www.loc.gov/catdir/description/wiley037/2001281228.html
電子資源:	http://www.loc.gov/catdir/bios/wiley044/2001281228.html
ISBN:	0471396974 (hbk.) :

MOSFET models for SPICE simulation, including BSIM3v3 and BSIM4 /
Liu, William.

MOSFET models for SPICE simulation, including BSIM3v3 and BSIM4 /aMetal oxide semiconductor field-effect transistors models for SPICE simulation, including BSIM3v3 and BSIM4.William Liu. - New York :Wiley,c2001. - xii, 588 p. :ill. ;24 cm.

Includes bibliographical references and index.

"Used by more chip designers worldwide than any other comparable model, the Berkeley Short-Channel IGFET Model (BSIM) has, over the past few years, established itself as the de facto standard MOSFET SPICE model for circuit simulation and CMOS technology development. Yet, until now, there have been no independent expert guides or tutorials to supplement the various BSIM manuals currently available. Written by a noted expert in the field, this book fills that gap in the literature by providing a comprehensive guide to understanding and making optimal use of BSIM3 and BSIM4."--BOOK JACKET.

ISBN: 0471396974 (hbk.) :NT3793Subjects--Topical Terms:

159162
Metal oxide semiconductor field-effect transistors
--Computer simulation.

LC Class. No.: TK7874

Dewey Class. No.: 621.3815/31 / S7

MOSFET models for SPICE simulation, including BSIM3v3 and BSIM4 /
LDR:01560nam _2200217 a_450 001 136353
005 20031019181201.0
008 031019s2001 nyua b 001 0 eng d
020 $a 0471396974 (hbk.) : $c NT3793
035 $a 00074329
050 $a TK7874
082 $a 621.3815/31 $b S7
092 $a */621.381531/L783/2001////E00950
100 1 $a Liu, William. $3 146899
245 1 0 $a MOSFET models for SPICE simulation, including BSIM3v3 and BSIM4 / $c William Liu.
246 3 $a aMetal oxide semiconductor field-effect transistors models for SPICE simulation, including BSIM3v3 and BSIM4.
260 $a New York : $b Wiley, $c c2001.
300 $a xii, 588 p. : $b ill. ; $c 24 cm.
504 $a Includes bibliographical references and index.
520 $a "Used by more chip designers worldwide than any other comparable model, the Berkeley Short-Channel IGFET Model (BSIM) has, over the past few years, established itself as the de facto standard MOSFET SPICE model for circuit simulation and CMOS technology development. Yet, until now, there have been no independent expert guides or tutorials to supplement the various BSIM manuals currently available. Written by a noted expert in the field, this book fills that gap in the literature by providing a comprehensive guide to understanding and making optimal use of BSIM3 and BSIM4."--BOOK JACKET.
650 0 $a Metal oxide semiconductor field-effect transistors $x Computer simulation. $3 159162
650 0 $a Electronic circuit design $x Data processing. $3 159163
650 0 $a Electric circuit analysis. $3 146860
856 4 1 $3 Table of contents $u http://www.loc.gov/catdir/toc/wiley021/2001281228.html
856 4 2 $3 Publisher description $u http://www.loc.gov/catdir/description/wiley037/2001281228.html
856 4 3 $3 Contributor biographical information $u http://www.loc.gov/catdir/bios/wiley044/2001281228.html

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